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AUTOMOTIVE GRADE
AUIRF1324S AUIRF1324L
HEXFET(R) Power MOSFET
D
PD - 97483
Features
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited)
G S
24V 1.3m 340Ac 195A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G
G
D
S
S D G
TO-262 AUIRF1324L
D2Pak AUIRF1324S
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified.
Symbol
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche CurrentAd Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
340 240 195 1420 300 2.0 20 270 See Fig. 14, 15, 22a, 22b 0.46 -55 to + 175 300
Units
A
d
e
f
d
W W/C V mJ A mJ V/ns
C
Thermal Resistance
Symbol
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted, steady-state)
k
Parameter
Typ.
Max.
0.50 40
Units
C/W
j
--- ---
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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1
03/29/2010
AUIRF1324S/L
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs RG IDSS IGSS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Internal Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
24 --- --- 2.0 180 --- --- --- --- --- --- 22 1.3 --- --- 2.3 --- --- --- ---
Conditions
--- V VGS = 0V, ID = 250A --- mV/C Reference to 25C, ID = 5.0mAd 1.65 m VGS = 10V, ID = 195A 4.0 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 195A --- 20 A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C 250 200 nA VGS = 20V VGS = -20V -200
g
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Symbol
Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd)
Min. Typ. Max. Units
160 84 49 76 17 190 83 120 7590 3440 1960 4700 4490 240 --- --- --- --- --- --- --- --- --- --- --- --- nC
Conditions
ID = 195A VDS = 12V VGS = 10V ID = 195A, VDS =0V, VGS = 10V VDD = 16V ID = 195A RG = 2.7 VGS = 10V VGS = 0V VDS = 24V = 1.0 MHz, See Fig. 5 See Fig. 11 VGS = 0V, VDS = 0V to 19V VGS = 0V, VDS = 0V to 19V
--- --- --- --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Input Capacitance --- Output Capacitance --- Reverse Transfer Capacitance --- Effective Output Capacitance (Energy Related) --- Effective Output Capacitance (Time Related) ---
g
ns
g
pF
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
i, h
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ad Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- 350 --- 1420 A A
Conditions
MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 195A, VGS = 0V VR = 20V, TJ = 25C IF = 195A TJ = 125C TJ = 25C di/dt = 100A/s TJ = 125C TJ = 25C
D
--- --- 1.3 V --- 46 --- ns --- 71 --- --- 160 --- nC --- 430 --- --- 7.7 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
S
g
Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140). Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.014mH RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value.
ISD 195A, di/dt 450A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recom R is measured at TJ approximately 90C.
Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994.
2
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AUIRF1324S/L
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2Pak TO-262 MSL1 N/A Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF1324S/L
10000 60s PULSE WIDTH Tj = 25C
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V
10000
60s PULSE WIDTH
Tj = 175C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
1000
100
1000
BOTTOM
BOTTOM
VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V
10
100
1 4.0V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
4.0V 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
2.0 ID = 195A VGS = 10V
ID, Drain-to-Source Current (A)
100 T J = 175C 10 T J = 25C
1.5
1.0
1 VDS = 15V 60s PULSE WIDTH 2 3 4 5 6 7 8 9
0.1
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
14.0 ID= 195A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
VDS= 19V VDS= 12V
C, Capacitance (pF)
10000
Ciss Coss Crss
1000 1 10 VDS, Drain-to-Source Voltage (V) 100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRF1324S/L
1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 Limited by package 10msec Tc = 25C Tj = 175C Single Pulse 1 0.0 0.5 1.0 1.5 1 10 VDS, Drain-to-Source Voltage (V) 100 VSD, Source-to-Drain Voltage (V)
100
T J = 175C
10
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
VGS = 0V 1.0
DC
350 300
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
32 Id = 5mA
Limited By Package
250 200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
30
28
26
24 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
2.0 1.8 1.6 1.4
Fig 10. Drain-to-Source Breakdown Voltage
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000 800 600 400 200 0
ID 44A 83A BOTTOM 195A TOP
Energy (J)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -5 0 5 10 15 20 25 30
25
50
75
100
125
150
175
Fig 11. Typical COSS Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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AUIRF1324S/L
1
Thermal Response ( Z thJC ) C/W
D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.0125 0.0822 0.2019 0.2036
0.000008 0.000078 0.001110 0.007197
i (sec)
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
Avalanche Current (A)
100 0.05 0.10
0.01
10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
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AUIRF1324S/L
300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C)
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5
VGS(th) , Gate threshold Voltage (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) ID = 250A ID = 1.0mA ID = 1.0A
Fig 16. Threshold Voltage vs. Temperature
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AUIRF1324S/L
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
VDS VGS RG RD
Fig 22b. Unclamped Inductive Waveforms
VDS 90%
D.U.T.
+
- VDD
V10V GS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 23a. Switching Time Test Circuit
Current Regulator Same Type as D.U.T.
Fig 23b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
8
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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AUIRF1324S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1324S
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF1324S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1324L
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1324S/L
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
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AUIRF1324S/L
Ordering Information
Base part AUIRF1324S AUIRF1324L Package Type D2Pak TO-262 Standard Pack Form Tube Tape and Reel Left Tape and Reel Right Tube Complete Part Number Quantity 50 800 800 50 AUIRF1324S AUIRF1324STRL AUIRF1324STRR AUIRF1324L
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AUIRF1324S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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